2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 HIGH CURRENT CAPABILITY
APPLICATIONS
a73 GENERAL PURPOSE SWITCHING AND
AMPLIFIER
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
INTERNAL SCHEMATIC DIAGRAM
January 2000
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
I
C
Collector Current 25 A
I
CM
Collector Peak Current 50 A
I
B
Base Current 7.5 A
Ptot Total Dissipation at T
c
≤ 25
o
C 200 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
®
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