2N5884
2N5886
COMPLEMENTARY SILICON
HIGH POWER TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 COMPLEMENTARY PNP - NPN DEVICES
a73 HIGH CURRENT CAPABILITY
APPLICATIONS
a73 GENERAL PURPOSE SWITCHING AND
AMPLIFIER
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
PNP 2N5884
NPN 2N5886
VCBO Collector-Base Voltage (IE = 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 25 A
I
CM
Collector Peak Current 50 A
IB Base Current 7.5 A
Ptot Total Dissipation at Tc ≤ 25
o
C 200 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
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