2N5882
器件描述：Silicon NPN High-Power Transistor
器件厂商：ONSEMI [ON Semiconductor]
文件大小：98.07KB，共8页
Sponsor by e络盟器件资料摘要：
Silicon NPN High-Power
Transistor
. . . designed for general–purpose power amplifier and switching
applications.
• Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 80 Vdc (Min)
• DC Current Gain —
h
FE
= 20 (Min) @ I
C
= 6.0 Adc
• Low Collector — Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 7.0 Adc
• High Current — Gain–Bandwidth Product —
f
T
= 4.0 MHz (Min) @ I
C
= 1.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CB
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EB
ÎÎÎÎ
5.0
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎÎ
I
C
ÎÎÎÎ
15
30
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
I
B
ÎÎÎÎ
5.0
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎ
ÎÎÎÎ
160
0.915
ÎÎÎ
ÎÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎ
–65 to +200
ÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θ
JC
ÎÎÎÎÎÎ
1.1
ÎÎÎ
C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
P
D
, POWER DISSIP
A
TION (W
A
TTS)
160
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
120
80
40
20
140
100
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1 Publication Order Number:
2N5882/D
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
Transistor
. . . designed for general–purpose power amplifier and switching
applications.
• Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 80 Vdc (Min)
• DC Current Gain —
h
FE
= 20 (Min) @ I
C
= 6.0 Adc
• Low Collector — Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 7.0 Adc
• High Current — Gain–Bandwidth Product —
f
T
= 4.0 MHz (Min) @ I
C
= 1.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CB
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EB
ÎÎÎÎ
5.0
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎÎ
I
C
ÎÎÎÎ
15
30
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
I
B
ÎÎÎÎ
5.0
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎ
ÎÎÎÎ
160
0.915
ÎÎÎ
ÎÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎ
–65 to +200
ÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θ
JC
ÎÎÎÎÎÎ
1.1
ÎÎÎ
C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
P
D
, POWER DISSIP
A
TION (W
A
TTS)
160
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
120
80
40
20
140
100
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1 Publication Order Number:
2N5882/D
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)