2N5832
NPN Transistor
TO-92
Features
• Through Hole Package
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage 140
(I
C
=300mAdc)
Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage 160

Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage

5.0 Vdc
I
CBO
Collector-Base Breakdown Current
(V
CE
=120Vdc)
50 nAdc
ON CHARACTERISTICS
h
FE
DC Current Gain*



(I
C
=10mAdc, V
CE
=5.0Vdc)


175 500
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc)

0.2 Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=10mAdc) 100 MHz
C
ob
Output Capacitance
4.0 pF
NF Noise Figure
---- dB
Pin Configuration
Bottom View C B E
A E
B
C
D
G
www.mccsemi.com
Plastic-case Bipolar
Note: Maximum at typical JEDEC condition
V(BR)CER @ R=10 OHMS
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC