Prelim. 8/96
2N5784
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
Collector – Base Voltage
V
CER(sus)
Collector – Emitter Sustaining Voltage R
BE
= 100G57
V
CEO(sus)
Collector – Emitter Sustaining Voltage
V
EBO
Emitter – Base Voltage
I
C
Continuous Collector Current
I
B
Continuous Collector Current
P
D
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
Total Device Dissipation T
C
= 25°C
Derate above 25°C
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead temperature, GB3
1
/
32
” (0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3