Prelim. 8/96
2N5786
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
Collector – Base Voltage
V
CER(sus)
Collector – Emitter Sustaining Voltage R
BE
= 100c87
V
CEO(sus)
Collector – Emitter Sustaining Voltage
V
EBO
Emitter – Base Voltage
I
C
Continuous Collector Current
I
B
Continuous Collector Current
P
D
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
Total Device Dissipation T
C
= 25°C
Derate above 25°C
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead temperature, c179
1
/
32
” (0.8mm) from seating plane for 10 s max.
45V
45V
40V
3.5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45
1
2
3