2N5770
Discrete POWER & Signal
Technologies
NPN RF Transistor
2N5770
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N5770
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Rθ
JC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
C
B
E
TO-92
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
 1997 Fairchild Semiconductor Corporation