DESCRIPTION
The 2N5681 and 2N5682 are silicon
expitaxial planar NPN transistors in
jedec TO-39 metal case intended for
use as drivers for high power transis-
tors in general purpose, amplifier and
switching circuits
The complementary PNP types are the
2N5679 and 2N5680 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated 2N56822N5681
2N5681
2N5682
Prelim.3/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
NPN SILICON
TRANSISTORS
V
CBO
Collector – Base Voltage(I
E
= 0)
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
GA3 25°C
T
amb
GA3 25°C
T
stg
Operating and Storage Temperature Range
T
j
Junction temperature
100V 120V
100V 120V
4V
1A
0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
G30G2EG38G39
G28G30G2EG30G33G35G29
G6DG61G78G2E
G31G32G2EG37G30
G28G30G2EG35G30G30G29
G6DG69G6EG2E
G36G2EG31G30G20G28G30G2EG32G34G30G29
G36G2EG36G30G20G28G30G2EG32G36G30G29
G38G2EG38G39G20G28G30G2EG33G35G29
G39G2EG34G30G20G28G30G2EG33G37G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G64G69G61G2E
G30G2EG36G36G20G28G30G2EG30G32G36G29
G31G2EG31G34G20G28G30G2EG30G34G35G29
G30G2EG37G31G20G28G30G2EG30G32G38G29
G30G2EG38G36G20G28G30G2EG30G33G34G29
G32G2EG35G34
G28G30G2EG31G30G30G29
G35G2EG30G38G20G28G30G2EG32G30G30G29
G74G79 G70 G2E
G34G35GB0
G31
G32
G33
TO-39
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector