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Prelim. 5/00
LAB
SEME
2N5664SMD
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
HIGH REL APPLICATIONS
FEATURES
• HIGH VOLTAGE
FAST SWITCHING
CERAMIC SURFACE MOUNT PACKAGE
SCREENING OPTIONS AVAILABLE
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
B
= 0)
I
B
Base Current
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
R
G71JC
Thermal Resistance Junction to Case
P
D
Power Dissipation
250V
200V
6V
0.6A
3A
–55 to +150°C
4.16°C/W
30W
MECHANICAL DATA
Dimensions in mm (inches)
SMD1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1 = Base
Underside View
2 = Collector 3 = Emitter
G33G2EG36G30G20G28G30G2EG31G34G32G29
G4DG61G78G2E
G33G2EG37G30G20G28G30G2EG31G34G36G29
G33G2EG34G31G20G28G30G2EG31G33G34G29
G33G2EG37G30G20G28G30G2EG31G34G36G29
G33G2EG34G31G20G28G30G2EG31G33G34G29
G30G2EG38G39
G28G30G2EG30 G33 G35 G29
G6DG69G6EG2E
G34G2E
G31G34G20
G28
G30
G2E
G31G36G33G29
G33G2E
G38G34G20
G28
G30
G2E
G31G35G31G29
G31G30G2E
G36G39G20
G28
G30G2E
G34G32G31G29
G31G30G2E
G33G39G20
G28
G30G2E
G34G30G39G29
G39G2EG36G37G20G28G30G2EG33G38G31G29
G39G2EG33G38G20G28G30G2EG33G36G39G29
G31G31G2EG35G38G20G28G30G2EG34G35G36G29
G31G31G2EG32G38G20G28G30G2EG34G34G34G29
G31G36G2E
G30G32G20
G28
G30G2E
G36G33G31G29
G31G35G2E
G37G33G20
G28
G30G2E
G36G31G39G29
G30G2EG35G30G20G28G30G2EG30G32G30G29
G30G2EG32G36G20G28G30G2EG30G31G30G29
G30G2E
G37G36
G28G30
G2E
G30
G33
G30
G29
G6DG69
G6E
G2E
G31G33
G32