High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector Emitter Sustaining Voltage –
V
CEO(sus)
= 140 Vdc
• High DC Current Gain – @ I
C
= 8.0 Adc
h
FE
= 15 (Min)
• Low Collector–Emitter Saturation Voltage –
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎÎÎÎ
140
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CB
ÎÎÎÎÎÎÎ
140
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎ
7.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current – Continuous
Peak
ÎÎÎÎÎ
I
C
ÎÎÎÎÎÎÎ
16
20
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current – Continuous
ÎÎÎÎÎ
I
B
ÎÎÎÎÎÎÎ
5.0
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
200
1.14
ÎÎ
ÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
Thermal Resistance, Junction to Case θ
JC
0.875 C/W
(1) Indicates JEDEC Registered Data.
200
0
0 20 40 60 80 100 120 140 200
Figure 1. Power Derating
T
C
, TEMPERATURE (°C)
150
100
50
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
P
D
, POWER DISSIP
A
TION (W
A
TTS)
160 180
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1 Publication Order Number:
2N5631/D
2N5631
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP