2N5609
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 80 V
VCEO Collector to emitter voltage 80 V
VEBO Emitter to base voltage 5.0 V
ICP Peak collector current A
IC Collector current 5.0 A
PC Collector power dissipation 25 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO Collector-base cut-off current VCB =80V;IE=0 10 A
IEBO Emitter-base cut-off current VEB =5V, IC=0 10 A
ICEO Collector-emitter cut-off current
VCBO Collector-base breakdown voltage
V(BR)CEO Collector-emitter breakdown voltage IC=10mA,IB=0 80 V
VEBO Emitter-base breakdown voltage
VCEsat-1 Collector-emitter saturation voltages IC =1A; IB =0.1A 0.5 V
VCEsat-2 Collector-emitter saturation voltages
VCEsat-3 Collector-emitter saturation voltages
VCEsat-4 Collector-emitter saturation voltages
hFE-1 Forward current transfer ratio IC=2.5A,VCE=5V 70 200
hFE-2 Forward current transfer ratio
hFE-3 Forward current transfer ratio
hFE-4 Forward current transfer ratio
VBE(sat)1 Base-emitter saturation voltages IC=1A,VCE=2V 1.0 V
VBE(sat)2 Base-emitter saturation voltages
VBE(sat)3 Base-emitter saturation voltages
fT Transition frequency at f = 1MHz
tf Fall time
ts Tum-off storage time
Electrical Characteristics Tc=25
Silicon PNP Transistors
TO-66
nullINCHANGEPower Transistors