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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N5555

器件描述:JFET Switching
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:271.68KB,共8页
Sponsor by e络盟
器件资料摘要:
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0074C0070C0069C0084 C0083C0119C0105C0116C0099C0104C0105C0110C0103
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
25 Vdc
Drain–Gate Voltage V
DG
25 Vdc
Gate–Source Voltage V
GS
25 Vdc
Forward Gate Current I
GF
10 mAdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Junction Temperature Range T
J
–65 to +150 °C
Storage Temperature Range T
stg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (I
G
= 10 µAdc, V
DS
= 0) V
(BR)GSS
25 — Vdc
Gate Reverse Current (V
GS
= 15 Vdc, V
DS
= 0) I
GSS
— 1.0 nAdc
Drain Cutoff Current (V
DS
= 12 Vdc, V
GS
= –10 V)
Drain Cutoff Current (V
DS
= 12 Vdc, V
GS
= –10 V, T
A
= 100°C)
I
D(off)


10
2.0
nAdc
µAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(1)
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
15 — mAdc
Gate–Source Forward Voltage
(I
G(f)
= 1.0 mAdc, V
DS
= 0)
V
GS(f)
— 1.0 Vdc
Drain–Source On–Voltage
(I
D
= 7.0 mAdc, V
GS
= 0)
V
DS(on)
— 1.5 Vdc
Static Drain–Source On Resistance
(I
D
= 0.1 mAdc, V
GS
= 0)
r
DS(on)
— 150 Ohms
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(V
GS
= 0, I
D
= 0, f = 1.0 kHz)
r
ds(on)
— 150 Ohms
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
— 5.0 pF
Reverse Transfer Capacitance
(V
DS
= 0, V
GS
= 10 Vdc, f = 1.0 MHz)
C
rss
— 1.2 pF
SWITCHING CHARACTERISTICS
Turn–On Delay Time (V
DD
= 10 Vdc, I
D(on)
= 7.0 mAdc,
V 0 V 10 Vd ) (S Fi 1)
t
d(on)
— 5.0 ns
Rise Time
()
GS(on)
= 0, V
GS(off)
= –10 Vdc) (See Figure 1)
t
r
— 5.0 ns
Turn–Off Delay Time (V
DD
= 10 Vdc, I
D(on)
= 7.0 mAdc,
V 0 V 10 Vd ) (S Fi 1)
t
d(off)
— 15 ns
Fall Time
()
GS(on)
= 0, V
GS(off)
= –10 Vdc) (See Figure 1)
t
f
— 10 ns
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
Order this document
by 2N5555/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
2
3
C0050C0078C0053C0053C0053C0053
 Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE