2N5550 NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: V CEO = 140V
• Collector Dissipation: P C (max)=625mW
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
• Refer to 2N5551 for graphs
ELECTRICAL CHARACTERISTICS (T A =25 °C )
* Pulse Test: Pulse Width ≤300 µs , Duty Cycle ≤2%
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T J
T STG
160
140
6
600
625
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
BV CBO
BV CEO
BV EBO
I CBO
I EBO
h FE
V CE (sat)
V BE (on)
f T
C OB
NF
I C =100 µA , I E =0
I C =1mA, I B =0
I E =10 µA , I C =0
V CB =100V, I E =0
V EB = 4V, I C =0
I C =1mA, V CE =5V
I C =10mA, V CE =5V
I C =50mA, V CE =5V
I C =10mA, I B =1mA
I C =50mA, I B =5mA
I C =10mA, I B =1mA
I C =50mA, I B =5mA
I C =10mA, V CE =10V
V CB =10V, I E =0
f=1MHz
I C =250 µA , V CE =5V
R S =1 K Ω
f=10Hz to 15.7KHz
160
140
6
60
60
20
100
100
50
250
0.15
0.25
1
1.2
300
6
10
V
V
V
nA
nA
V
V
V
V
MHz
pF
dB
TO-92
1.Emitter 2. Base 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B