2N5550
器件描述：mplifier Transistors(NPN Silicon)
器件厂商：ONSEMI [ON Semiconductor]
文件大小：188.13KB，共6页
Sponsor by e络盟器件资料摘要：
Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1 Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
• Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit
Collector − Emitter Voltage V
CEO
140 160 Vdc
Collector − Base Voltage V
CBO
160 180 Vdc
Emitter − Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
JC
83.3 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 1
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
55xx Specific Device Code
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N
55xx
YWW
June, 2004 − Rev. 3
1 Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
• Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit
Collector − Emitter Voltage V
CEO
140 160 Vdc
Collector − Base Voltage V
CBO
160 180 Vdc
Emitter − Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
JC
83.3 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 1
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
55xx Specific Device Code
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N
55xx
YWW