2N5457
器件描述:JFETs-General Purpose
文件大小:82.64KB,共4页
Sponsor by e络盟
器件资料摘要:
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 3
1 Publication Order Number:
2N5457/D
2N5457, 2N5458
2N5457 and 2N5458 are Preferred Devices
JFETs - General Purpose
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for audio and switching applications.
• N–Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low Transfer and Input Capacitance
• Low Cross–Modulation and Intermodulation Distortion
• Unibloc Plastic Encapsulated Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
25 Vdc
Drain–Gate Voltage V
DG
25 Vdc
Reverse Gate–Source Voltage V
GSR
–25 Vdc
Gate Current I
G
10 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
310
2.82
mW
mW/°C
Operating Junction Temperature T
J
135 °C
Storage Temperature Range T
stg
–65 to +150 °C
Device Package Shipping
ORDERING INFORMATION
2N5457 TO–92
TO–92
CASE 29
STYLE 5
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5458 TO–92 5000 Units/Box
Y = Year
WW = Work Week
MARKING DIAGRAMS
2N
5457
YWW
2N
5458
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE