2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage - 25 V
I
GF
Forward Gate Current 10 mA
T
J
,T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
G
S
D
TO-92
SOT-23
Mark: 6B / 6M / 6H
G
S
D
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5484 *MMBF5484
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
225
1.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation