1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0074C0070C0069C0084 C0086C0072C0070C0047C0085C0072C0070 C0065C0109C0112C0108C0105C0102C0105C0101C0114C0115
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
DG
25 Vdc
Reverse Gate–Source Voltage V
GSR
25 Vdc
Drain Current I
D
30 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= –1.0 µAdc, V
DS
= 0)
V
(BR)GSS
–25 — — Vdc
Gate Reverse Current
(V
GS
= –20 Vdc, V
DS
= 0)
(V
GS
= –20 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
—
—
—
—
–1.0
–0.2
nAdc
µAdc
Gate Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc) 2N5484
2N5486
V
GS(off)
–0.3
–2.0
—
—
–3.0
–6.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current 2N5484
(V
DS
= 15 Vdc, V
GS
= 0) 2N5486
I
DSS
1.0
8.0
—
—
5.0
20
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) 2N5484
2N5486
y
fs

3000
4000
—
—
6000
8000
C0109mhos
Input Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz) 2N5484
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz) 2N5486
Re(y
is
)
—
—
—
—
100
1000
C0109mhos
Output Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) 2N5484
2N5486
y
os

—
—
—
—
50
75
C0109mhos
Output Conductance
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz) 2N5484
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz) 2N5486
Re(y
os
)
—
—
—
—
75
100
C0109mhos
Forward Transconductance
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 MHz) 2N5484
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz) 2N5486
Re(y
fs
)
2500
3500
—
—
—
—
C0109mhos
Order this document
by 2N5484/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
2
3
C0050C0078C0053C0052C0056C0052
C0050C0078C0053C0052C0056C0054
 Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE