2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Discrete POWER & Signal
Technologies
2N5460
2N5461
2N5462
MMBF5460
MMBF5461
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
-
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage - 40 V
V
GS
Gate-Source Voltage 40 V
I
GF
Forward Gate Current 10 mA
T
J
,T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N5460 *MMBF5460
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
G
S
D
TO-92 SOT-23
Mark: 6E / 61U
G
S
D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã1997 Fairchild Semiconductor Corporation