2N5460
器件描述:CASE 2904, STYLE 7 TO92 (TO226AA)
文件大小:116.09KB,共4页
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器件资料摘要:
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0074C0070C0069C0084 C0065C0109C0112C0108C0105C0102C0105C0101C0114C0115
P–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
DG
40 Vdc
Reverse Gate–Source Voltage V
GSR
40 Vdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Junction Temperature Range T
J
–65 to +135 °C
Storage Channel Temperature Range T
stg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 10 µAdc, V
DS
= 0) 2N5460, 2N5461, 2N5462
V
(BR)GSS
40 — — Vdc
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0) 2N5460, 2N5461, 2N5462
(V
GS
= 30 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 100°C) 2N5460, 2N5461, 2N5462
(V
GS
= 30 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
—
—
—
—
5.0
1.0
nAdc
µAdc
Gate–Source Cutoff Voltage 2N5460
(V
DS
= 15 Vdc, I
D
= 1.0 µAdc) 2N5461
2N5462
V
GS(off)
0.75
1.0
1.8
—
—
—
6.0
7.5
9.0
Vdc
Gate–Source Voltage
(V
DS
= 15 Vdc, I
D
= 0.1 mAdc) 2N5460
(V
DS
= 15 Vdc, I
D
= 0.2 mAdc) 2N5461
(V
DS
= 15 Vdc, I
D
= 0.4 mAdc) 2N5462
V
GS
0.5
0.8
1.5
—
—
—
4.0
4.5
6.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current 2N5460
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) 2N5461
2N5462
I
DSS
–1.0
–2.0
–4.0
—
—
—
–5.0
–9.0
–16
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance 2N5460
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) 2N5461
2N5462
y
fs
1000
1500
2000
—
—
—
4000
5000
6000
C0109mhos
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) y
os
— — 75 C0109mhos
Input Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz) C
iss
— 5.0 7.0 pF
Reverse Transfer Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz) C
rss
— 1.0 2.0 pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V
DS
= 15 Vdc, V
GS
= 0, R
G
= 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
NF — 1.0 2.5 dB
Equivalent Short–Circuit Input Noise Voltage
(V
DS
= 15 Vdc, V
GS
= 0, f = 100 Hz, BW = 1.0 Hz)
e
n
— 60 115
nVC0324 Hz
C0504
Order this document
by 2N5460/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0053C0052C0054C0048
C0116C0104C0114C0117
C0050C0078C0053C0052C0054C0050
CASE 29–04, STYLE 7
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1997
2 DRAIN
1 SOURCE
3
GATE