2N5458
器件描述:N-Channel JFET General Purpose Amplifier/Switch
文件大小:17.97KB,共1页
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器件资料摘要:
N-Channel JFET
General Purpose Amplifier/Switch
2N5457 – 2N5459
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . 2.82mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N5457-59 Plastic TO-92 -55
o
C to +135
o
C
X2N5457-59 Sorted Chips in Carriers -55
o
C to +135
o
C
CORPORATION
PIN CONFIGURATION
TO-92
S
G
D
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
BVGSS Gate-Source Breakdown Voltage -25 V IG = -10µA, VDS = 0
IGSS Gate Reverse Current
-1.0
nA
VGS = -15V, VDS = 0
-200 VGS = -15V, VDS = 0, TA = 100
o
C
VGS(off) Gate-Source Cutoff Voltage
2N5457 -0.5 -6.0
V
VDS = 15V, ID = 10nA
2N5458 -1.0 -7.0
2N5459 -2.0 -8.0
VGS Gate-Source Voltage
2N5457 2.5
V
VDS = 15V, ID = 100µA, Typical
2N5458 3.5 VDS = 15V, ID = 200µA, Typical
2N5459 4.5 VDS = 15V, ID = 400µA, Typical
IDSS
Zero-Gate-Voltage Drain Current
(Note 1)
2N5457 1.0 5.0
mA
VDS = 15V, VGS = 0
2N5458 2.0 9.0
2N5459 4.0 16
| yfs | Forward Transfer Admittance
2N5457 1000 5000
µS
VDS = 15V, VGS = 0 , f = 1kHz
2N5458 1500 5500
2N5459 2000 6000
| yos | Output Admittance 50 µSVDS = 15V, VGS = 0, f = 1kHz
Ciss Input Capacitance (Note 2) 7.0 pF VDS = 15V, VGS = 0, f = 1MHz
Crss Reverse Transfer Capacitance (Note 2) 3.0 pF VDS = 15V, VGS = 0, f = 1MHz
NF Noise Figure (Note 2) 3.0 dB VDS = 15V, VGS = 0, RG = 1MHz, BW = 1Hz, f = 1kHz
NOTES: 1. Pulse test required. PW ≤630ms, duty cycle ≤10%.
2. For design reference only, not 100% tested.
5010