2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal
Technologies
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage - 25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Characteristic Max Units
2N5457 *MMBF5457
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
G
S
D
TO-92
SOT-23
Mark: 6D / 61S / 6L
G
S
D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã1997 Fairchild Semiconductor Corporation