2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
V
CEO
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current – Continuous
I
B
Base Current
P
D
Total Device Dissipation at T
case
= 25°C
Derate above 25°C
T
j
Operating and
T
stg
Storage Junction Temperature Range
R
G71JC
Thermal Resistance, Junction to Case.
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1 Base
Pin 2 Emitter
Case Collector
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
24.33 (0.958) 24.43 (0.962)
14.48 (0.570) 14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028) 0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470) 12.70 (0.500)
LAB
SEME
This product is available screened in
accordance with various military specs.
EG. 2N5430CECC–QR–B
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
Prelim. 1/94
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk