2N5415S
器件描述：HIGH-VOLTAGE AMPLIFIER
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：52.36KB，共4页
Sponsor by e络盟器件资料摘要：
2N5415S
October 1988
HIGH-VOLTAGE AMPLIFIER
The 2N5415S is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case, intended for high
vol-tage switching and linear amplifier applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
= 0) – 200 V
V
CEO
Collector-emitter Voltage (I
B
= 0) – 200 V
V
EBO
Emitter-base Voltage (I
C
=0) –4 V
I
CM
Collector Peak Current – 1 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
1
10
W
W
T
stg
,T
j
Storage and Junction Temperature – 55 to 200 °C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/4
October 1988
HIGH-VOLTAGE AMPLIFIER
The 2N5415S is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case, intended for high
vol-tage switching and linear amplifier applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
= 0) – 200 V
V
CEO
Collector-emitter Voltage (I
B
= 0) – 200 V
V
EBO
Emitter-base Voltage (I
C
=0) –4 V
I
CM
Collector Peak Current – 1 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
1
10
W
W
T
stg
,T
j
Storage and Junction Temperature – 55 to 200 °C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/4