2N5401
器件描述:PNP Silicon Transistor (General purpose amplifier High voltage application)
文件大小:202.36KB,共3页
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器件资料摘要:
KST-9040-000 1
2N5401
PNP Silicon Transistor
Description
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : V
CBO
= -160V, V
CEO
= -150V
• Low collector saturation voltage : V
CE(sat)
=-0.5V(MAX.)
• Complementary pair with 2N5551
Ordering Information
Type NO. Marking Package Code
2N5401 2N5401 TO-92
Outline Dimensions unit : mm
Semiconductor
4.5±0.1
4.
5
±
0.
1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.
20
±
0.
1
0.
38
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
±
0.
40