B-20 01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Drain Source Voltage 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.7 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
At 25°C free air temperature: 2N5397 2N5398 Process NJ26L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 – 25 V I
G
= – 1 µA, V
DS
= ØV
Gate Source Forward Voltage V
GS(F)
11
G
= 1 mA, V
DS
= ØV
Gate Reverse Current I
GSS
– 0.1 – 0.1 nA V
GS
= – 15V, V
DS
= ØV
– 0.1 – 0.1 µA V
GS
= – 15V, V
DS
= ØV T
A
= 150°C
Gate Source Cutoff Voltage V
GS(OFF)
– 1– 6– 1– 6 V V
DS
= 10V, I
D
= 1 nA
Drain Saturation Current (Pulsed) I
DSS
10 30 5 40 mA V
DS
= 10V, V
GS
= ØV
Dynamic Electrical Characteristics
Common Source
g
fs
5.5 9 5 10 mS V
DG
= 10V, I
D
= 10 mA f = 450 MHz
Forward Transconductance
Common Source
| Y
fs
| 6 10 5.5 10 mS V
DS
= 10V, I
D
= 10 mA f = 1 kHz
Forward Transfer Admittance
Common Source Output Conductance | g
os
| 0.4 0.5 mS V
DG
= 10V, I
D
= 10 mA f = 450 MHz
Common Source Input Admittance | Y
os
| 0.2 0.4 mS V
DS
= 10V, I
D
= 10 mA f = 1 kHz
Common Source Input Conductance g
is
23mS
DG
= 10V, I
D
= 10 mA f = 450 MHz
Common Source Input Capacitance C
iss
5 5.5 pF V
DG
= 15V, V
GS
= ØV f = 1 kHz
Common Source
C
rss
1.2 1.3 pF V
DG
= 15V, V
GS
= ØV f = 1 kHz
Reverse Transfer Capacitance
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Databook.fxp 1/13/99 2:09 PM Page B-20