©2002 Fairchild Semiconductor Corporation Rev. A1, July 2002
2N53
66
TO-92
1
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector current - Continuous 500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CBO
Collector-Base Breakdown Voltage I
C
= 10µA40V
V
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA 40 V
V
EBO
Emitter-Base Breakdown Voltage I
C
= 10µ .
I
CBO
Collector Cut-off Current V
CB
= 40V 100 nA
I
CES
Collector Cut-off Current V
CB
= 40V 100 nA
I
EBO
Emitter Cut-off Current V
EB
= 4.0V 10 µA
h
FE
DC Current Gain V
CE
= 10V, I
C
= 2.0mA
V
CE
= 1.0V, I
C
= 50mA
V
CE
= 5.0V, I
C
= 300mA
80
100
40
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 2.5mA
I
C
= 300mA, I
B
= 30mA
0.25
1.0
V
V
BE
(sat) Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 2.5mA
I
C
= 300mA, I
B
= 30mA
1.1
2.0
V
BE
(on) Base-Emitter On Voltage V
CE
= 10V, I
C
= 2.0mA 0.5 0.8 V
C
ob
Output Capacitance V
CB
= 10V, f = 1MHz 8.0 pF
C
ib
Input Capacitance V
CB
= 0.5V, f = 1MHz 35 pF
h
fe
Small-Signal Current Gain V
CE
= 10V, I
C
= 2.0mA, f = 1MHz 80 450
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 200 °C/W
2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
1. Emitter 2. Collector 3. Base