2N5337A-220M
器件描述:SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
文件大小:16.75KB,共2页
Sponsor by e络盟
器件资料摘要:
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.8/00
2N5337A-220M
V
CBO
Collector - Base voltage (I
E
= 0)
V
CEO
Collector - Emitter voltage (I
B
= 0)
V
EBO
Emitter - Base voltage (I
C
= 0)
I
C
Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
G3DG2025°C
T
stg
Storage Temperature
T
j
Junction Temperature
80V
80V
6V
5A
1A
10W
–65 to 200°C
200°C
MECHANICAL DATA
Dimensions in mm
16.
5
13.
5
10.
6
13.
70
2.54
BSC
10.6
3.6
Dia.
0.8
4.6
1.0
2.70
BSC
123
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL PACKAGE
FEATURES
• HERMETIC METAL PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
FULLY ISOLATED
APPLICATIONS
POWER LINEAR AND SWITCHING
APPLICATIONS
GENERAL PURPOSE POWER
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
TO220 PACKAGE