Chip Appearance Chip Size 1.9mm x 1.9mm
Chip Thickness 230 ± 20µm
Bonding Pad Dimension
Scribe Line Width 50µm
Top Metal Al
Back Metal Ti-Ni-Ag
Raper Size 4 inch
Absolute Max Ratings (Ta=25°C) (TO-220)
Item Symbol Max Ratings Unit Note
Collector-Base Voltage V CBO 80 V
Collector-Emitter Voltage V CEO 70 V
Emitter-Base Voltage V EBO 7 V
Collector Current I C 4 mA
Collector Loss (Power Dissipation) P C 36 W
Junction Temperature T j °C
Storage Temperature T stg -65 to +150 °C
Electrical Characteristics (Ta=25°C) (TO-220)
Item Symbol Min. Typ. Max. Unit Condition
Collector-Base B V CBO 80 - - V IC = 100 µA
Breakdown Voltage
Collector-Emitter B V CEO 70 - - V IC = 200 mA
Breakdown Voltage
Emitter-Base B V EBO 7 - - V IE = 100 µA
Breakdown Voltage
Collector Cut-Off Current I CBO - - - µA VCB = V
Emitter Cut-Off Current I EBO - - 1 mA VEB = 7V
DC Current Gain h FE 30 - 120 - VCE = 4 V, IC = 500mA
Collector Saturation V CE(SAT) - - 1 V IC = 500mA, IB = 50mA
Probing Spec (Ta=25°C)
No. Mode Limit Condition
Min. Max. Unit
1 V BE - - V I B =
2 B V CEO 70 - V I C = 200mA
3 I CBO - - µA V CB = V
4 I EBO - 1 mA V EB = 7V
5 I CEO - - µA V CE = V
6 h FE 30 120 - V CE = 4 V, I C = 500A
7 V CE(SAT) - 1 V I C = 500mA, I B = 50mA
SPEC SHEET
2N5294
Emitter 555 µm x 325 µm
Base 665µm x 315µm