2N5191
器件描述：MEDIUM POWER NPN SILICON TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：65.34KB，共4页
Sponsor by e络盟器件资料摘要：
2N5191
2N5192
MEDIUM POWER NPN SILICON TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 NPN TRANSISTOR
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5191 and 2N5192 are silicon
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N5191 2N5192 Unit
VCBO Collector-Base Voltage (IE = 0) 60 80 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current 7 A
I
B
Base Current 1 A
Ptot Total Dissipation at Tc ≤ 25
o
C40W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
3
2
1
SOT-32
1/4
2N5192
MEDIUM POWER NPN SILICON TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 NPN TRANSISTOR
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5191 and 2N5192 are silicon
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N5191 2N5192 Unit
VCBO Collector-Base Voltage (IE = 0) 60 80 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current 7 A
I
B
Base Current 1 A
Ptot Total Dissipation at Tc ≤ 25
o
C40W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
3
2
1
SOT-32
1/4