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2N5179

器件描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:165.35KB,共5页
Sponsor by e络盟
器件资料摘要:
MSC1305.PDF 10-25-99
2N5179
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
applications.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 12 Vdc
V CB O Collector-Base Voltage 20 Vdc
V EBO Emitter-Base Voltage 2.5 Vdc
I C Collector Current 50 mA
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
300
1.71
mWatts
mW/ º C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, TO-72 packaged VHF/UHF Transistor

• Low Noise, NF = 4.5 dB (max) @ 200 MHz

• High Current-Gain-Bandwidth Product 1.4 Ghz ( typ) @ 10 mAdc

• Characterized with S-Parameters
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855