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2N5114

器件描述:P-Channel JFET Switch
器件厂商:CALOGIC [Calogic, LLC]
文件大小:33.39KB,共2页
Sponsor by e络盟
器件资料摘要:
P-Channel JFET Switch
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and ±10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES

Low ON Resistance

I
D(off)
<500pA

Switches directly from TTL Logic
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +200
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N5114-16 Hermetic TO-18 -55
o
C to +200
o
C
X2N5114-16 Sorted Chips in Carriers -55
o
C to +200
o
C
CORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
SWITCHING CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL PARAMETER
2N5114 2N5115 2N5116
UNITS
MAX MAX MAX
td Turn-ON Delay Time 6 10 12
ns
tr Rise Time (Note 2) 10 20 30
toff Turn-OFF Delay Time (Note 2) 6 8 10
tf Fall Time (Note 2) 15 30 50
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL PARAMETER
2N5114 2N5115 2N5116
UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
BVGSS Gate-Source Breakdown Voltage 30 30 30 V IG = 1µA, VDS = 0
IGSS Gate Reverse Current
500 500 500 pA VGS = 20V, VDS = 0
1.0 1.0 1.0 µATA 150
o
C
ID(off) Drain Cutoff Current
-500 -500 -500 pA VDS = -15V
VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
-1.0 -1.0 -1.0 µA
VP Gate-Source Pinch-Off Voltage 5 10 3 6 1 4 V VDS = -15V, ID = -1nA
5508