MSC1304.PDF 10-25-99
2N5109
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 20 Vdc
V CBO Collector-Base Voltage 40 Vdc
V EBO Emitter-Base Voltage 3.0 Vdc
IC Collector Current 400 mA
Thermal Data
P D Total Device Dissipation @ T C = 75ºC (1)
Derate above 25ºC
2.5
20
Watts
mW/ º C
Note 1. Total Device dissipation at T A = 25ºC is 1 Watt.
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor

• 1.2 GHz Current-Gain Bandwidth Product @ 50mA
• Maximum Unilateral Gain = 12dB ( typ) @ 200 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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