2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 2N5088
2N5089
30
25
V
V
V
CBO
Collector-Base Voltage 2N5088
2N5089
35
30
V
V
VEBO Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5088
2N5089
*MMBT5088
*MMBT5089
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
Rθ
JA
Thermal Resistance, Junction to Ambient 200 357 °C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
 1997 Fairchild Semiconductor Corporation