2N5031
器件描述：RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
器件厂商：MICROSEMI [Microsemi Corporation]
文件大小：83.37KB，共4页
Sponsor by e络盟器件资料摘要：
MSC1303.PDF 10-25-99
2N5031
DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 10 Vdc
V CBO Collector-Base Voltage 15 Vdc
V EBO Emitter-Base Voltage 3.0 Vdc
I C Collector Current 20 mA
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ º C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain – 12 dB ( typ) @ 400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5031
DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 10 Vdc
V CBO Collector-Base Voltage 15 Vdc
V EBO Emitter-Base Voltage 3.0 Vdc
I C Collector Current 20 mA
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ º C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain – 12 dB ( typ) @ 400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855