Parameter Test Conditions Min. Typ. Max. Unit
Prelim. 8/96
2N5014
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for switch-
ing and linear applications in a hermetic
TO–39 package.
V
CBO
Collector – Base Voltage
V
CER
Collector – Emitter Voltage R = 10c87
V
EBO
Emitter – Base Reverse Voltage
I
C
Continuous Collector Current
P
TOT
Total Device Dissipation T
C
= 25°C
T
J
Maximum Operating Junction Temperature
T
STG
and Storage Temperature Range
900V
900V
5V
2W
3.5A
200°C
-55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45
1
2
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise stated)
I
CBO
Collector Base Leakage Current
hFE D.C Current Gain
fae
V
CB
= 900V
V
CE
= 10V I
C
=0.02A
0.012
20 180
20
mA
—
MHz