2N4953
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N4953
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 1.0 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4953
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
E
C
B
TO-92
 1997 Fairchild Semiconductor Corporation