Medium-Power Plastic NPN
Silicon Transistors
...designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
• Low Saturation Voltage —
V
CE(sat)
= 0.6 Vdc (Max) @ I
C
= 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction —
P
D
= 30 W @ T
C
= 25 C
• Excellent Safe Operating Area
• Gain Specified to I
C
= 1.0 Amp
• Complement to PNP 2N4918, 2N4919, 2N4920
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
2N4921
ÎÎÎ
ÎÎÎ
2N4922
ÎÎÎÎ
ÎÎÎÎ
2N4923
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
V
CEO
ÎÎÎ
40
ÎÎÎ
60
ÎÎÎÎ
80
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
V
CB
ÎÎÎ
40
ÎÎÎ
60
ÎÎÎÎ
80
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
V
EB ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
5.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous (1)
ÎÎÎÎ
I
C
ÎÎÎÎÎÎÎÎ
1.0
3.0
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
ÎÎÎÎ
I
B
ÎÎÎÎÎÎÎÎ
1.0
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎ
ÎÎÎÎ
P
D
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
30
0.24
ÎÎ
ÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating & Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
–65 to +150
ÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θ
JC
ÎÎÎÎÎÎ
4.16
ÎÎÎ
C/W
(1) The 1.0 Amp maximum I
C
value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor

 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1 Publication Order Number:
2N4921/D
2N4921
thru
2N4923
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
*
CASE 77–09
TO–225AA TYPE
3
2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE