2N4410
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N4410
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 50 mA. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 120 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4410
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
 1997 Fairchild Semiconductor Corporation