Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
80 Vdc
Collector–Base Voltage V
CBO
120 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
250 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
80 — Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 500 µAdc, V
BE
= 5.0 Vdc, R
BE
= 8.2 k ohms)
V
(BR)CEX
120 — Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 µAdc, I
E
= 0)
V
(BR)CBO
120 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 µAdc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
—
—
0.01
1.0
µAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
— 0.1 µAdc
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 11
1 Publication Order Number:
2N4410/D
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
2N4410
COLLECTOR
3
2
BASE
1
EMITTER