2N4403
器件描述：PNP General Purpose Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：42.8KB，共7页
Sponsor by e络盟器件资料摘要：
2N4403 / MMBT4403
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBOCollector-Base Voltag 40
V
EBO
Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous60 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N4403
C
B
E
TO-92
MMBT4403
C
B
E
SOT-23
Mark: 2T
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4403 *MMBT4403
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBOCollector-Base Voltag 40
V
EBO
Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous60 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N4403
C
B
E
TO-92
MMBT4403
C
B
E
SOT-23
Mark: 2T
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4403 *MMBT4403
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C