UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BVCEO>40V (IC=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
-55~+150
Unit
V
V
V
A
Collector power
dissipation
PC
0.2
W
˚C
˚C
2N4401
UMT4401
SST4401
MMST4401
!External dimensions (Units : mm)
UMT4401
SST4401
MMST4401
2N4401
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+0.2 −
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
0~0.1
2.8
±
0.2
1.6
0.3
~
0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+0.2 −
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
0~0.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2 0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8±0.2 3.7±0.2
5
0.45±0.1 2.3
0.5±0.1.
2.5
+0.3
−0.1
(1) (2) (3)
All terminals have the same
dimensions
All terminals have the same
dimensions
All terminals have the same
dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
60
40
6
-
-
-
-
-
-
-
-
-
-
0.1
0.1
V
V
V
µA
µA
IC=100µA
IC=1mA
IE=100µA
VCB=35V
VEB=5V
- - 1.2
Base-emitter saturation voltage VBE(sat)
- - 0.95
V
- - 0.75 IC/IB=500mA/50mA
Collector-emitter saturation voltage VCE(sat)
- - 0.4
V
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA
40 - -
100 - 300
DC current transfer ratio hFE 80 - - -
40 - -
20 - - VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
Transition frequency
Collector output capacitance
fT
Cob
250
-
-
-
-
6.5
MHz
pF
VCE=10V, IE=-20mA, f=100MHz
VCB=10V, f=100kHz
Emitter input capacitance Cib - - 30 pF VEB=0.5V, f=100kHz
Delay time td - - 15 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA
VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mARise time tr - - 20 ns
Storage time tstg - - 225 ns VCC=30V, IC=150mA, IB1=-IB2=15mA
VCC=30V, IC=150mA, IB1=-IB2=15mA Fall time tf - - 30 ns