1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
34
2N4400, 2N4401 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25°C) Grenzwerte (T
A
= 25°C)
2N4400, 2N4401
Collector-Emitter-voltage B open V
CE0
40 V
Collector-Base-voltage E open V
CE0
60 V
Emitter-Base-voltage C open V
EB0
6 V
Power dissipation – Verlustleistung P
tot
625 mW
1
)
Collector current – Kollektorstrom (dc) I
C
600 mA
Junction temp. – Sperrschichttemperatur T
j
150°C
Storage temperature – Lagerungstemperatur T
S
- 55…+ 150°C
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
V
CEsat
–
–
–
–
400 mV
750 mV
Base saturation voltage – Basis-Sättigungsspannung
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
V
BEsat
750 mV
–
–
–
950 mV
1.2 V
Collector cutoff current – Kollektorreststrom
V
CE
= 35 V, V
EB
= 0.4 V I
CBV
– – 100 nA
Emitter cut-off current – Emitterreststrom
V
CE
= 35 V, V
EB
= 0.4 V I
EBV
– – 100 nA