MSC1058.PDF 05-19-99
2N4240
ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
VCBO* Collector-Base Voltage 500 Volts
VCEO* Collector-Emitter Voltage 300 Volts
VCER* Collector-Emitter Voltage RBE = 50Ω 400 Volts
VEBO* Emitter-Base Voltage 6 Volts
IC* Peak Collector Current 5 Amps
IC* Continuous Collector Current 2 Amps
IB* Base Current 1 Amps
TSTG* Storage Temperature -65 to 200 °C
TJ* Operating Junction Temperature -65 to 200 °C
* Lead Temperature 1/16" from Case for 10 Sec. 235 °C
PT*
θ JC
Power Dissipation
TC = 25°C
Thermal Impedance
35
5.0
Watts
°C/W
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
TO-66
APPLICATIONS:
• Off-Line Inverters • Deflection Circuits
• Switching Regulators • DC-DC Converters
• Motor Controls • High Voltage Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered data.
FEATURES:
• High Voltage: 250 to 500V • High Current: 2 Amps
• Fast Switching: tf < 3µsec. • Low VCE (SAT)
• High Power: 35 Watts