2N4150S
器件描述:Type 2N4150S Geometry 9201 Polarity NPN
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器件资料摘要:
Ty pe 2N4150S
Geometry 9201
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N4150S
Generic Part Number:
2N4150S
REF: MIL-PRF-19500/394
Features:
• Power switching transistor for high
speed switching applicatons.
• Housed in a TO-39 case.
• Also available in chip form using
the 9201 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/394 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V CEO 70 V
Collector-Base Voltage V CBO 100 V
Emitter-Base Voltage V EBO 10 V
Collector Current, Continuous I C 10 A
Power Dissipation at 25 o C ambient 1.0 mW
Derate above 25 o C 5.7 mW/ o C
Power Dissipation at 25 o C ambient 5.0 W
Derate above 25 o C 50 mW/ o C
R JC 0.020 o C/mW
R JA 0.175 o C/mW
Operating Junction Temperature T J -65 to +200 o C
Storage Temperature T STG -65 to +200 o C
Thermal Impedance
Maximum Ratings
T C = 25 o C unless otherwise specified
P T
P T
TO-39