2N4126 MMBT4126
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents to 10 µA as a switch and to 100
mA as an amplifier. Sourced from Process 66. See 2N3906 for
characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA= 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 25 V
V
CBO
Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4126 *MMBT4126
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
Rθ
JA
Thermal Resistance, Junction to Ambient 200 357 °C/W
2N4126 / MMBT4126
C
B
E
TO-92
C
B
E
SOT-23
Mark: ZF
Discrete POWER & Signal
Technologies
 1997 Fairchild Semiconductor Corporation