2N4125
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
2N4125
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10 µA to 100 mA.
Sourced from Process 66. See 3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4125
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
Rθ
JA
Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
 1997 Fairchild Semiconductor Corporation