1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N4123 2N4124 Unit
Collector–Emitter Voltage V
CEO
30 25 Vdc
Collector–Base Voltage V
CBO
40 30 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
E
= 0) 2N4123
2N4124
V
(BR)CEO
30
25
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 C0109Adc, I
E
= 0) 2N4123
2N4124
V
(BR)CBO
40
30
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109Adc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
I
CBO
— 50 nAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
— 50 nAdc
1. Pulse Test: Pulse Width = 300 C0109s, Duty Cycle = 2.0%.
Order this document
by 2N4123/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0052C0049C0050C0051
C0050C0078C0052C0049C0050C0052
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER