Features
l Through Hole TO-92 Package
l Capable of 625mWatts of Power Dissipatio







Mechanical Data
l Case: TO-92, Molded Plastic
l Marking:
2N4123 --------- 2N4123
2N4124 --------- 2N4124
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage 2N4123
2N4124
V
CEO
30
25
V
Collector-Base Voltage 2N4123
2N4124
V
CBO
40
30
V
Emitter-Base Voltage 2N4123
2N4124
V
EBO
5 V
Collector Current(DC) I
C
200 mA
Power Dissipation@T
A
=25
o
C
P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C







2N4123
2N4124

NPN Silicon General
Purpose Transistor
625mW

TO-92
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A E
B
C
D
G
DIMENSIONS
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Pin Configuration
Bottom View C B E
G01
G01G02G03G04
G01
G01G02G03G04
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC