2N4036
器件描述：CASE 79.04, STYLE 1 TO-39 (TO-205AD)
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：86.64KB，共4页
Sponsor by e络盟器件资料摘要：
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol 2N4036 2N4037 Unit
Collector–Emitter Voltage V
CEO
–65 –40 Vdc
Collector–Base Voltage V
CBO
–90 –60 Vdc
Emitter–Base Voltage V
EBO
–7.0 –7.0 Vdc
Base Current I
B
–0.5 Adc
Collector Current — Continuous I
C
–1.0 Adc
Continuous Power Dissipation
at or Below T
C
= 25°C
Linear Derating Factor
P
D
5.0
28.6
5.0
28.6
Watts
mW/°C
Continuous Power Dissipation
at or Below T
A
= 25°C
Linear Derating Factor
P
D
1.0
5.72
1.0
5.72
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
Lead Temperature
1/16″ from Case for 10 Seconds
T
L
230 °C
THERMAL CHARACTERISTICS
Characteristic Symbol 2N4036 2N4037 Unit
Thermal Resistance, Junction to Case R
C0113JC
35 35 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(1)
(I
C
= –100 mAdc, I
B
= 0) 2N4036
2N4037
V
CEO(sus)
–65
–40
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= –0.1 mAdc) 2N4037
V
(BR)CBO
–60 — Vdc
Collector Cutoff Current
(V
CE
= –85 Vdc, V
EB
= –1.5 Vdc) 2N4036
(V
CE
= –30 Vdc, V
EB
= –1.5 Vdc, T
C
= 150°C) 2N4037
I
CEX
—
—
–0.1
–100
mAdc
Collector Cutoff Current
(V
CB
= –90 Vdc, I
E
= 0) 2N4036
(V
CB
= –60 Vdc, I
E
= 0) 2N4037
I
CBO
—
—
–1.0
–0.25
µAdc
Emitter Cutoff Current
(V
EB
= –7.0 Vdc, I
C
= 0) 2N4036
(V
EB
= –5.0 Vdc, I
C
= 0) 2N4037
I
EBO
—
—
–10
–1.0
µAdc
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
Order this document
by 2N4036/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0052C0048C0051C0054
C0050C0078C0052C0048C0051C0055
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol 2N4036 2N4037 Unit
Collector–Emitter Voltage V
CEO
–65 –40 Vdc
Collector–Base Voltage V
CBO
–90 –60 Vdc
Emitter–Base Voltage V
EBO
–7.0 –7.0 Vdc
Base Current I
B
–0.5 Adc
Collector Current — Continuous I
C
–1.0 Adc
Continuous Power Dissipation
at or Below T
C
= 25°C
Linear Derating Factor
P
D
5.0
28.6
5.0
28.6
Watts
mW/°C
Continuous Power Dissipation
at or Below T
A
= 25°C
Linear Derating Factor
P
D
1.0
5.72
1.0
5.72
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
Lead Temperature
1/16″ from Case for 10 Seconds
T
L
230 °C
THERMAL CHARACTERISTICS
Characteristic Symbol 2N4036 2N4037 Unit
Thermal Resistance, Junction to Case R
C0113JC
35 35 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(1)
(I
C
= –100 mAdc, I
B
= 0) 2N4036
2N4037
V
CEO(sus)
–65
–40
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= –0.1 mAdc) 2N4037
V
(BR)CBO
–60 — Vdc
Collector Cutoff Current
(V
CE
= –85 Vdc, V
EB
= –1.5 Vdc) 2N4036
(V
CE
= –30 Vdc, V
EB
= –1.5 Vdc, T
C
= 150°C) 2N4037
I
CEX
—
—
–0.1
–100
mAdc
Collector Cutoff Current
(V
CB
= –90 Vdc, I
E
= 0) 2N4036
(V
CB
= –60 Vdc, I
E
= 0) 2N4037
I
CBO
—
—
–1.0
–0.25
µAdc
Emitter Cutoff Current
(V
EB
= –7.0 Vdc, I
C
= 0) 2N4036
(V
EB
= –5.0 Vdc, I
C
= 0) 2N4037
I
EBO
—
—
–10
–1.0
µAdc
1. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
Order this document
by 2N4036/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0052C0048C0051C0054
C0050C0078C0052C0048C0051C0055
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER