2N4014
October 1988
HIGH-VOLTAGE, HIGH CURRENT SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-base Voltage (I
E
=0) 80 V
V
CES
Collector-emitter Voltage (V
BE
=0) 80 V
V
CEO
Collector-emitter Voltage (I
B
=0) 50 V
V
EBO
Emitter-base Voltage (I
C
=0) 6 V
I
C
Collector Current 1 A
P
tot
Total Power Dissipation at T
amb
≤ 25 °C
at T
case
≤ 25 °C
0.36
1.2
W
W
T
stg
,T
j
Storage and Junction Temperature – 65 to 200 °C
The 2N4014 is a silicon planar epitaxial transistor in
TO-18 metal case. It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating cur-
rents to 1 A. Fast switching times are assured be-
cause of the high minimum fT (300 MHz) and tight
control on storage time.
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
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